Influence of the Pd–Si Ratio on the Valence Transition in EuPd₂Si₂ Single Crystals

Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well Czochralski technique. The chemical and structural characterization extracted single crystalline Czochralski-grown specimen yielded a slight variation Si-Pd ratio along growth direction confirms existence finite Eu(Pd$_{1-m}$Si$_m$)$_2$ homogeneity range. thorough physical carried out on same crystal showed that this tiny in composition strongly affects temperature T$_v$ at which valence transition occurs. These experiments demonstrate strong coupling between properties prototypical valence-fluctuating system explain different reported values T$_v$.